View AUIRLR3915_9023421.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

? AUIRLR3915 v dss 55v r ds(on) typ. 12m ?? i d (silicon limited) 61a i d (package limited) 30a max. 14m ?? features ? advanced plannar technology ? logic-level gate drive ? low on-resistance ? 175c operating temperature ? fast switching ? fully avalanche rated ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * description specifically designed for automotive applications, this stripe planar design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. 1 2015-12-14 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? automotive grade symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 61 a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 43 i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 30 i dm pulsed drain current ? 240 p d @t c = 25c maximum power dissipation 120 w linear derating factor 0.77 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy (thermally limited) ? 200 mj e as (tested) single pulse avalanche energy tested value ? 600 i ar avalanche current ? see fig.15,16, 12a, 12b a e ar repetitive avalanche energy ? mj t j operating junction and -55 to + 175 c ? t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) 300 absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond thos e indicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for exte nded periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (ta) is 25c, unle ss otherwise specified. thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ? ??? 1.3 c/w r ? ja junction-to-ambient ( pcb mount) ? ??? 50 r ? ja junction-to-ambient ??? 110 d-pak AUIRLR3915 base part number package type standard pack orderable part number form quantity AUIRLR3915 d-pak tube 75 AUIRLR3915 tape and reel left 3000 AUIRLR3915trl g d s gate drain source s g d hexfet ? power mosfet
? AUIRLR3915 2 2015-12-14 notes: ? ? repetitive rati ng; pulse width limited by max. junction temperature. (see fig. 11) ? limited by t jmax , starting t j = 25c, l = 0.45mh, r g = 25 ? , i as = 30a, v gs =10v. part not recommended for use above this value. ?? i sd ?? 30a, di/dt ?? 280a/s, v dd ?? v (br)dss , t j ? 175c. ? pulse width ?? 1.0ms; duty cycle ? 2%. ?? c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss ?? limited by t jmax , see fig.12a, 12b, 15, 16 for typica l repetitive avalanche performance. ?? this value determined from sample failure population, starting t j = 25c, l = 0.45mh, r g = 25 ? , i as = 30a, v gs =10v. ? when mounted on 1" square pcb (fr-4 or g-10 material). fo r recommended footprint and soldering techniques refer to application note #an-994 ?? r ? is measured at t j approximately 90c. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.057 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 12 14 m ???? v gs = 10v, i d = 30a ?? ??? 14 17 v gs = 5.0v, i d = 26a ?? v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = v gs , i d = 250a gfs forward trans conductance 42 ??? ??? s v ds = 25v, i d = 30a ? i dss drain-to-source leakage current ??? ??? 20 a v ds = 55v, v gs = 0v ??? ??? 250 v ds = 55v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 200 na v gs = 16v gate-to-source reverse leakage ??? ??? -200 v gs = -16v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? 61 92 nc ? i d = 30a q gs gate-to-source charge ??? 9.0 14 v ds = 44v q gd gate-to-drain charge ??? 17 25 v gs = 10v ? t d(on) turn-on delay time ??? 7.4 ??? ns v dd = 28v t r rise time ??? 51 ??? i d = 30a t d(off) turn-off delay time ??? 83 ??? r g = 8.5 ?? t f fall time ??? 100 ??? v gs = 10v ? l d internal drain inductance ??? 4.5 ??? nh ? between lead, 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 1870 ??? pf ? v gs = 0v c oss output capacitance ??? 390 ??? v ds = 25v c rss reverse transfer capacitance ??? 74 ??? ? = 1.0mhz, see fig. 5 c oss output capacitance ??? 2380 ??? v gs = 0v, v ds = 1.0v ? = 1.0mhz c oss output capacitance ??? 290 ??? v gs = 0v, v ds = 44v ? = 1.0mhz c oss eff. effective output capacitance ? ??? 540 ??? v gs = 0v, v ds = 0v to 44v diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 61 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 240 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 30a, v gs = 0v ?? t rr reverse recovery time ??? 62 93 ns t j = 25c ,i f = 30a, v dd = 25v q rr reverse recovery charge ??? 110 170 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d )
? AUIRLR3915 3 2015-12-14 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 typical forward trans conductance vs. drain current fig. 1 typical output characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.0v 20s pulse width tj = 25c vgs top 15v 10v 5.0v 3.0v 2.7v 2.5v 2.25v bottom 2.0v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.0v 20s pulse width tj = 175c vgs top 15v 10v 5.0v 3.0v 2.7v 2.5v 2.25v bottom 2.0v 1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 v gs , gate-to-source voltage (v) 0.10 1.00 10.00 100.00 1000.00 i d , d r a i n - t o - s o u r c e c u r r e n t ? ?
? AUIRLR3915 4 2015-12-14 fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage ? fig 8. maximum safe operating area fig. 7 typical source-to-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 10 20 30 40 50 60 70 0 2 4 6 8 10 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 30a v = 11v ds v = 27v ds v = 44v ds 0.1 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 175 c j t = 25 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
? AUIRLR3915 5 2015-12-14 fig 10. normalized on-resistance vs. temperature fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 t , cas e temperature ( c) i , drain current (a) c d limited by package -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 61a 0. 01 0.1 1 10 0.00001 0. 0001 0.001 0. 01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0. 01 0. 02 0. 05 0. 10 0. 20 d = 0.50 single pulse (thermal response)
? AUIRLR3915 6 2015-12-14 ? fig 12c. maximum avalanche energy vs. drain current fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 13b. gate charge test circuit fig 13a. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 14. threshold voltage vs. temperature 25 50 75 100 125 150 175 0 100 200 300 400 500 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 12a 21a 30a -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 0.5 1.0 1.5 2.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a
? AUIRLR3915 7 2015-12-14 fig 15. typical avalanche current vs. pulse width notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.infineon.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanc he is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 16. maximum avalanche energy vs. temperature 1.0e-08 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 180 200 220 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 30a
? AUIRLR3915 8 2015-12-14 ? fig 17. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets fig 18a. switching time test circuit fig 18b. switching time waveforms
? AUIRLR3915 9 2015-12-14 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ d-pak (to-252aa) package outline (dimensions are shown in millimeters (inches)) ywwa xx ? xx date code y= year ww= work week aulr3915 lot code part number ir logo d-pak (to-252aa) part marking information
? AUIRLR3915 10 2015-12-14 d-pak (to-252aa) tape & reel information (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch
? AUIRLR3915 11 2015-12-14 ? qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level ? d-pak msl1 esd machine model class m2 (+/- 200v) ? aec-q101-002 human body model ? class h1b (+/- 1000v) ? aec-q101-001 charged device model class c5 (+/- 2000v) ? aec-q101-005 rohs compliant yes published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 12/14/2015 ?? updated datasheet with corporate template ?? corrected ordering table on page 1. ? highest passing voltage.

▲Up To Search▲

Price & Availability of AUIRLR3915

	To Download AUIRLR3915 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .